A sectorial scheme of gate-all-around field effect transistor with improved electrical characteristics
نویسندگان
چکیده
Abstract Reliability and controllability for a new scheme of gate-all-around field effect transistor (GAA-FET) with silicon channel utilizing sectorial cross section is evaluated in terms Ion/Ioff current ratio, transconductance, subthreshold slope, threshold voltage roll-off, drain induced barrier lowering (DIBL). In addition, the scaling behavior electronic figures merit comprehensively studied aid physical simulations. The electrical characteristic proposed structure compared circular GAA-FET, which previously calibrated an IBM sample at 22 nm length using 3D-TCAD Our simulation results show that GAA-FET superior controlling short effects (SCEs) to obtain better performance conventional counterpart.
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ژورنال
عنوان ژورنال: Ain Shams Engineering Journal
سال: 2021
ISSN: ['2090-4479', '2090-4495']
DOI: https://doi.org/10.1016/j.asej.2020.04.015